Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-08-02
2011-08-02
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S004000, C257SE29002
Reexamination Certificate
active
07989792
ABSTRACT:
An abrupt MIT (metal-insulator transition) device with parallel MIT material layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one MIT material layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the MIT material layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the MIT material layer, which is typically caused by current flowing through the MIT material layer, is less likely to occur.
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Chae Byung-Gyu
Kang Kwang-Yong
Kim Bong-Jun
Kim Hyun-Tak
Lee Yong-Wook
Electronics and Telecommunications Research Institute
Pert Evan
Rabin & Berdo P.C.
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