Abrasive used for planarization of semiconductor device and...

Details Abrasive used for planarization of semiconductor device and... Abrasive used for planarization of semiconductor device and...

2005-04-12

2005-04-12

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

Reexamination Certificate

active

06878631

ABSTRACT:
An abrasive for a semiconductor device comprises cerium oxide particles and coating materials. The cerium oxide particles are made principally of cerium oxide (CeO2). The coating materials cover the surface of the cerium oxide particles.

REFERENCES:
patent: 4971602 (1990-11-01), Crawford
patent: 571865 (1993-12-01), None
patent: 56084782 (1981-07-01), None
patent: 9-321003 (1997-12-01), None
patent: 10-135163 (1998-05-01), None

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