Abrasive material for polishing a semiconductor wafer, and metho

Details Abrasive material for polishing a semiconductor wafer, and metho Abrasive material for polishing a semiconductor wafer, and metho

1998-05-14

2000-04-04

Koslow, C. Melissa

Compositions: coating or plastic

Coating or plastic compositions

Polishes

252 771, 51307, 216 89, 438693, B24B 100, C09G 102

Patent

active

060456051

ABSTRACT:
An abrasive material is prepared by dispersing silicon nitride particles acting as abrasive particles in a solvent such as a pure water or an ultra pure water, followed by adding an adsorptive stickable to the abrasive particles to the dispersion. The resultant abrasive material permits diminishing the polishing rate of a silicon nitride film used as a stopper film, with the result that a CVD SiO.sub.2 film to be polished is selectively polished relative to the Si.sub.3 N.sub.4 film used as the stopper film. This makes it possible to make the stopper film as thin as possible and permits the CVD SiO.sub.2 film to be flattened efficiently without bringing about a dishing problem.

REFERENCES:
patent: 5733819 (1998-03-01), Kodama et al.
patent: 5876490 (1999-03-01), Ronay

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