Abrasive composition and use of the same

Details Abrasive composition and use of the same Abrasive composition and use of the same

1997-08-29

1998-09-08

Jones, Deborah

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

51308, 51309, 106 3, 216 89, C09G 102

Patent

active

058045139

ABSTRACT:
An abrasive composition is provided comprising an oxidizing agent and abrasive particles which have a mean particle size of 2 .mu.m or less, wherein each of the abrasive particles comprises (i) at least one oxide selected from aluminum oxide and silicon oxide and (ii) cerium oxide in an amount of 5% to 40% by weight in terms of cerium based on the oxide (i). A method for polishing and planarizing a metal layer formed on a semiconductor substrate using the abrasive composition is also provided.

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