Above via metal-to-metal antifuse

Details Above via metal-to-metal antifuse Above via metal-to-metal antifuse

1992-11-04

1994-05-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437190, 437192, 437193, 437922, 148DIG55, H01L 2144

Patent

active

053087950

ABSTRACT:
A method for fabricating a metal-to-metal antifuse comprises the steps of (1) forming and defining a first metal interconnect layer; (2) forming an interlayer dielectric layer; (3) forming an antifuse via in the interlayer dielectric layer to expose the first metal interconnect layer; (4) depositing a via metal layer into a portion of the volume defining the antifuse via; (5) forming a planarizing layer of an insulating material in the antifuse via sufficient to fill a remaining portion of the volume defining the antifuse via; (6) etching the planarizing layer to expose an upper surface of the via metal layer and an upper surface of the interlayer dielectric layer so as to form a substantially planar surface comprising the upper surface of the interlayer dielectric layer, the planarizing layer, and the upper surface of the via metal layer; (7) forming an antifuse material layer over the substantially planar surface; (8) forming a metal capping layer over the antifuse material layer; and (9) defining the antifuse material layer and the metal capping layer.

REFERENCES:
patent: 4651409 (1987-03-01), Ellsworth et al.
patent: 4751197 (1988-06-01), Wills
patent: 4800176 (1989-01-01), Kakumu et al.
patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 4914055 (1990-04-01), Gordon et al.
patent: 5100827 (1992-03-01), Lytle
patent: 5120679 (1992-06-01), Boardman et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5171715 (1992-12-01), Husher et al.

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