Above via metal-to-metal antifuse

Details Above via metal-to-metal antifuse Above via metal-to-metal antifuse

1995-01-24

1996-11-19

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, 257209, H01L 2904, H01L 2710, H01L 2900

Patent

active

055765769

ABSTRACT:
A method for fabricating a metal-to-metal antifuse comprises the steps of (1) forming and defining a first metal interconnect layer; (2) forming an interlayer dielectric layer; (3) forming an antifuse via in the interlayer dielectric layer to expose the first metal interconnect layer; (4) depositing a via metal layer into a portion of the volume defining the antifuse via; (5) forming a planarizing layer of an insulating material in the antifuse via sufficient to fill a remaining portion of the volume defining the antifuse via; (6) etching the planarizing layer to expose an upper surface of the via metal layer and an upper surface of the interlayer dielectric layer so as to form a substantially planar surface comprising the upper surface of the interlayer dielectric layer, the planarizing layer, and the upper surface of the via metal layer; (7) forming an antifuse material layer over the substantially planar surface; (8) forming a metal capping layer over the antifuse material layer; and (9) defining the antifuse material layer and the metal capping layer.

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