Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2008-07-29
2008-07-29
Nguyen, Tuan H (Department: 2813)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257S421000, C148S239000, C428S842300
Reexamination Certificate
active
07405086
ABSTRACT:
A manganese-implanted silicon substrate exhibits ferromagnetism and a Curie temperature above room temperature when magnetized. The implant is done at a temperature of between about 250 C and about 800 C, while the manganese concentration is between about 0.01 atomic percent and 10 atomic percent. The silicon substrate can be p- or n-type with a doping concentration between 1015and 1021cm−3. Annealing may be done to increase the saturation magnetization.
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Awo-Affouda Chaffra Adeyandju
Bolduc Martin
Huang Mengbing
LaBella Vincent Patrick
Heslin Rothenberg Farley & & Mesiti P.C.
Nguyen Tuan H
Reinke, Esq. Wayne F.
The Research Foundation of State University of New York
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