Ablative scribing of solar cell structures

Details Ablative scribing of solar cell structures Ablative scribing of solar cell structures

2010-10-14

2011-11-01

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S676000, C438S463000, C257S431000, C257SE27124, C257SE21238, C136S244000

Reexamination Certificate

active

08048706

ABSTRACT:
Provided herein are improved methods of laser scribing photovoltaic structures to form monolithically integrated photovoltaic modules. The methods involve forming P1, P2 or P3 scribes by an ablative scribing mechanism having low melting, and in certain embodiments, substantially no melting. In certain embodiments, the methods involve generating an ablation shockwave at an interface of the film to be removed and the underlying layer. The film is then removed by mechanical shock. According to various embodiments, the ablation shockwave is generated by using a laser beam having a wavelength providing an optical penetration depth on the order of the film thickness and a minimum threshold intensity. In one embodiment, material including an absorber layer is scribed using an infrared laser source and a picosecond pulse width.

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