Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1992-12-28
1994-03-29
Bowers, Jr., Charles L.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430323, 430324, 430945, 378 35, 156643, G03F 900
Patent
active
052983510
ABSTRACT:
An ablation mask that includes a transparent substrate having a patterned layer located between two dielectric transparent material coatings thereon is provided. Also, the ablation mask is useful in dry etching processes to provide patterned layers, and other laser processing applications that require high fluence such as photodeposition, thin film transfer and thin film release.
REFERENCES:
patent: 4340654 (1970-01-01), Campi
patent: 4414059 (1983-11-01), Blum et al.
patent: 4456371 (1984-06-01), Lin
patent: 4522862 (1985-06-01), Bayer et al.
patent: 4618561 (1986-10-01), Munakata et al.
patent: 4764441 (1988-08-01), Ohta et al.
patent: 4822144 (1989-04-01), Vriens
patent: 4923772 (1990-05-01), Kirch et al.
patent: 4975355 (1990-12-01), Suzuki
Moreau, W. M. and Warnecke, A. J., "Dielectric Photomasks", IBM Technical Disclosure Bulletin, vol. 13, No. 1, Jun. 1970.
Martin, P. J. et al, "Ion-Assisted Dielectric and Optical Coatings", Handbook of Ion Beam Processing Technology, Noyes Publications, pp. 373-393.
Elliott, D. J., "Integrated Circuit Mask Technology", pp. 87-92, McGraw-Hill Book Co.
Tannas, L. E., "Flat-Panel Displays and CRTs", pp. 415-445, Van Nostrand Reinhold Company.
Bobroff Norman
Rosenbluth Alan E.
Bowers Jr. Charles L.
International Business Machines - Corporation
Neville Thomas R.
LandOfFree
Ablation mask and use thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ablation mask and use thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ablation mask and use thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-790607