Aberration measuring apparatus for charged particle beam...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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Reexamination Certificate

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11337603

ABSTRACT:
A charged particle beam lithography machine for exposing a target exposure surface by using a plurality of charged particle beams. The machine includes a charged particle source to emit a charged particle beam, an aperture substrate which has a plurality of apertures to divide the charged particle beam from the charged particle source into a plurality of charged particle beams, a plurality of electron optical systems which have the apertures as pupils, a charged particle beam optical system which projects, to the target exposure surface, charged particle source images formed by the plurality of electron optical systems, a unit adapted to set the apertures of the aperture substrate to an aperture for exposure and an aperture for aberration measurement to make the plurality of charged particle beams strike the charged particle beam optical system at different incident angles, and a detecting unit adapted to detect a position where the plurality of charged particle beams, which have passed through the aperture for aberration measurement, form images on an image surface of the charged particle beam optical system.

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