A1GaInP light emitting diode

Details A1GaInP light emitting diode A1GaInP light emitting diode

1996-12-26

1998-04-28

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257 97, 257 98, 372 43, 372 45, 372 46, H01L 3300

Patent

active

057448299

ABSTRACT:
An AlGaInP light-emitting diode includes a double hetero-junction light-emitting structure of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P on a GaAs substrate. A multi-film reflection layer is provided between the GaAs substrate and the double hetero-junction light-emitting structure. The layers forming the double hetero-junction are lattice matched with the GaAs substrate at an epitaxial growth temperature. A GaP current diffusion layer is disposed on the upper surface of the double hetero-junction light-emitting structure, and ohmic electrodes are provided on the underside of the GaAs substrate and on the upper surface of the current diffusion layer.

REFERENCES:
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5300788 (1994-04-01), Fan et al.
patent: 5403916 (1995-04-01), Watanabe et al.
patent: 5442203 (1995-08-01), Adomi et al.
patent: 5453405 (1995-09-01), Fan et al.
patent: 5537433 (1996-07-01), Watanabe
patent: 5565694 (1996-10-01), Huang et al.
patent: 5625202 (1997-04-01), Chai
patent: 5661742 (1997-08-01), Huang et al.

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