A TiW diffusion barrier for AuZn ohmic contacts to p-type InP

Details A TiW diffusion barrier for AuZn ohmic contacts to p-type InP A TiW diffusion barrier for AuZn ohmic contacts to p-type InP

1988-06-17

1989-03-28

James, Andrew J.

357 65, 357 67, 357 71, H01L 2980

Patent

active

048168815

ABSTRACT:
A low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an overlay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to p InP material leads to unique processing and improved InP semiconductor devices.

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