Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1999-08-10
2000-07-04
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 31, 257 32, 257645, 423263, 423593, 505238, 505239, H01L 2906, H01L 310256, H01L 3922
Patent
active
060842466
ABSTRACT:
Compounds of the general formula A.sub.4 MeSb.sub.3 O.sub.12 wherein A is either barium (Ba) or strontium (Sr) and Me is an alkali metal ion selected from the group consisting of lithium (Li), sodium (Na) and potassium (K) have been prepared and included in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.
REFERENCES:
patent: 5814584 (1998-09-01), Tauber et al.
A. Tauber, et al, abstract entitled "Sr.sub.2 ReSbO.sub.6 ; Re=Rare Earth, arrier/Dielectric Layers and Substrates for Thin Film High T.sub.c Superconductors for Microwave Applications," published in Abstracts of Materials Research Society 1994 Fall Meeting, p. 292, Nov. 27-Dec. 02, 1994, Boston, Massachusetts.
S.C. Tidrow et al., "HTSC Substrate and Buffer Compounds, A.sub.2 MeSbO.sub.6 Where A=Ba, Sr and Me=Sc, In and Ga," published in Physica C, presented at 1995 Material Research Society's Spring Meeting held in San Francisco, California; Sep. 1995.
A.J. Jacobsen, et al., 30 Acta Crystalligraphica, 1705-1711; Dec. 1974.
J.A. Alonso, et al., 22 Materials Research Bulletin, 69-74; Dec. 1987.
K.P. Reis, et.al., preprinted in Texas Center for Superconductivity at University of Houston and printed at 49 Acta Crystalligraphica, 1585-1588; Dec. 1993.
J.A. Alonso, et.al., 84 Journal of Solid State Chemistry, 16-22; Dec. 1990.
P. Woodward, et.al., 9 Journal of Material Research, 2118-2126; Mar. 1994.
R.D. Shannon et.al., "Dielectric constants of yttrium and rare-earth garnets, the polarizability of gallium oxide and the oxide additivity rule,"; and, Dec. 1990.
R.D. Shannon, "Dielectric polarizabilities of ions in oxides and fluorides,". Dec. 1993.
Finnegan Robert D.
Tauber Arthur
Tidrow Steven C.
Wilber William D.
Saadat Mahshid
Tereschuk George B.
The United States of America as represented by the Secretary of
Wilson Allan R.
Zelenka Michael
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