A stripe-shaped heterojunction laser with unique current confine

Details A stripe-shaped heterojunction laser with unique current confine A stripe-shaped heterojunction laser with unique current confine

1989-01-13

1991-04-23

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, 372 48, 351 17, 437129, H01S 319, H01L 3300

Patent

active

050105566

ABSTRACT:
A semiconductor laser having an internal current restriction includes a (100) face-oriented p-type GaAs substrate treated to have a groove or difference in level having an (n11) A face (n=1-5) as an inclined surface. An AlGaAs:Si layer, an AlGaAs:Be cladding layer, an AlGaAs active layer, and an AlGaAs:Sn cladding layer are grown on the substrate in the order mentioned. Since the Si acts as an n-type material on the (100) face and as a p-type material on the (n11) face, the AlGaAs:Si layer becomes a p-type layer solely in the groove, and it is in this portion that a current path is formed. The laser can be fabricated by molecular-beam epitaxy applied in a single step.

REFERENCES:
patent: 4333061 (1982-06-01), Sasatani
patent: 4503539 (1985-03-01), Mori et al.
patent: 4506366 (1985-03-01), Chinone et al.

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