A semiconductor laser light source

Details A semiconductor laser light source A semiconductor laser light source

1981-07-15

1984-04-03

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 15, 357 17, H01S 319

Patent

active

044411871

ABSTRACT:
A light source with a semiconductor junction having a substrate on which are successively deposited a first and second semiconductor layer having opposite doping and means for injecting charge carriers from a power supply, wheein the means includes a highly doped contact layer partly covered by an alloyed metal layer forming an ohmic contact and a metal layer covering the alloyed layer, together with the remainder of the second semiconductor layer, with the metal layer being connected to the power supply and wherein the semiconductor constituting the second layer is chosen from among those which form a Schottky diode in contact with a metal like that of the metal layer. The diode is reverse polarized under the normal operating conditions of the source with the zone in which charge injection takes place consequently being limited to a single ohmic contact zone, excluding the zones in which there is a Schottky diode.

REFERENCES:
patent: 4206468 (1980-06-01), Carballes
patent: 4238764 (1980-12-01), Carballes et al.
patent: 4352187 (1982-09-01), Amann

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