A semiconductor device having a collector structure free from cr

Details A semiconductor device having a collector structure free from cr A semiconductor device having a collector structure free from cr

1991-02-26

1992-10-06

Carroll, J.

357 49, 357 55, 357 65, 357 68, H01L 2912, H01L 2712, H01L 2906, H01L 2348

Patent

active

051536943

ABSTRACT:
A semiconductor device includes a semiconductor layer, an insulating film, a polysilicon film, and a plurality of high-impurity concentration regions. The semiconductor layer has a first conductive region and a second conductive region of a conductivity type opposite to that of the first conductive region. The insulating film is formed on the semiconductor layer having a plurality of small windows on at least said first conductive region. The polysilicon film covers the insulating film and is in contact with the semiconductor layer through the small windows. The plurality of high-impurity concentration regions are formed corresponding to the small windows.

REFERENCES:
patent: 3667008 (1972-05-01), Katnack
patent: 3740835 (1973-06-01), Duncan
patent: 4466178 (1984-08-01), Soclof
patent: 4499657 (1985-02-01), Ooga et al.
patent: 4511912 (1985-04-01), Mahrla
patent: 5003367 (1991-03-01), Dathe et al.
patent: 5047831 (1991-09-01), Katayama
E. Levine et al., "Diffusion-Induced Defects in Silicon. I", Journal of Applied Physics, vol. 38, (Jan. 1967) pp. 81-87.

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