A-selenium-tellurium photosensitive member and electrostatic inf

Details A-selenium-tellurium photosensitive member and electrostatic inf A-selenium-tellurium photosensitive member and electrostatic inf

1991-02-07

1993-03-09

Goodrow, John

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430128, G03G 5085

Patent

active

051926342

ABSTRACT:
The a-selenium-tellurium photosensitive member according to the present invention comprises an electric charge injection preventive layer, an a-selenium-tellurium mixed vacuum evaporation layer of 0.03-0.2 .mu.m thick having tellurium concentration within the range of 20-50 wt % with uniform concentration on the deposited surface, and an electric charge transport layer, and these three layers are sequentially laminated on a transparent electrode layer. Thus, a-selenium-tellurium layer is formed in thin film, and thermal excitation carrier and injection carrier can be reduced to very low level even when tellurium concentration is increased. The increase of dark current is not very high. Panchromatic property can be provided in visible light region, and the sensitivity can be improved even in short wavelength region.

REFERENCES:
patent: 4822712 (1989-04-01), Foley et al.
patent: 4842973 (1989-06-01), Badesha et al.

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