A Process for modulating the quantity of gold diffused into a si

Details A Process for modulating the quantity of gold diffused into a si A Process for modulating the quantity of gold diffused into a si

1989-11-08

1991-07-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 94, 437 6, 437146, H01L 2967

Patent

active

050325400

ABSTRACT:
For modulating the quantity of gold diffused in a silicon substrate, prior to gold diffusion, one realizes a diffusion of phosphorus varying within a 10.sup.13 to 10.sup.15 atoms/cm.sup.3 range. The concentration of phosphorous is increased at the places where one wishes to increase the gold concentration.

REFERENCES:
patent: 4140560 (1979-02-01), Rodov
patent: 4551744 (1985-11-01), Suzuki
F. Morehead et al., "Self-Interstitial and Vacancy Contributions to Silicon Self-Diffusion Determined from the Diffusion of Gold in Silicon", Appl. Phys. Lett., vol. 42, No. 8 (Apr. 1983), pp. 690-692.
N. A. Stolwijk et al., "Diffusion and Solubility of Gold in Silicon", Physica 116B (1983), pp. 335-342.
N. A. Stolwijk et al., "Diffusion of Gold in Dislocation-Free or Highly Dislocated Silicon Measured by the Spreading-Resistance Technique", Appl. Phys., vol. 39, No. 1 (1986), pp. 37-48.
Takuzo Ogawa et al., "On Determination of Gold Trap Concentration in Diffused Silicon pn Junctions", Japanese Journal of Applied Physics, vol. 9, No. 1 (Jan. 1970), pp. 81-89.
Ghandi, S. K., VLSi Fabrication Principles, A Wiley-Interscience Publication, New York (1983).
Sze, S. M., Physics of Semiconductor Devices, A Wiley-Interscience Publication, New York (1981).
Baldi, L. et al., Phys. Stat. Sol. (a), 48, pp. 523 (1978).
"Gold Solubility & Gettering by Phosphorus".

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