A method of manufacturing a quantum interference semiconductor d

Details A method of manufacturing a quantum interference semiconductor d A method of manufacturing a quantum interference semiconductor d

1991-09-11

1992-10-20

Quach, T. N.

Fishing, trapping, and vermin destroying

437203, 437228, 437927, 156644, 156652, H01L 21302

Patent

active

051569884

ABSTRACT:
A method of making a quantum interference semiconductor device comprising the steps of forming a first semiconductor layer on a semi-insulating semiconductor substrate, forming a semi-insulating second semiconductor layer on the first semiconductor layer, forming a metal film so as to form a gate electrode on the second semiconductor layer, forming a first opening by selectively removing the metal film to form the gate electrode, forming a mask on the first opening and etching until midway in the film thickness direction of the semi-insulative second semiconductor layer by anitropic etching through said first opening and subsequently forming an etching until an upper surface of the semiconductor substrate by isotropic etching occurs so as to form a second opening into the semi-insulative second semiconductor layer and the first semiconductor layer which is continuous with the first opening portion and forming a cathode from the first semiconductor layer and a blocker made of the second semiconductor layer.

REFERENCES:
patent: 4503447 (1985-03-01), Iafrate et al.
patent: 4751194 (1988-06-01), Cibert et al.
patent: 4764246 (1988-08-01), Bridges et al.
patent: 4783427 (1988-11-01), Reed et al.
patent: 4883769 (1989-11-01), Au Gin et al.
Bandyopadhyay, S. et al., "A Novel Quantum Interference Transistor (QUIT) with Extremely Low Power-Delay Product and Very High Transconductance", IEEE IEDM Technical Digest, 1986, pp. 76-79.

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