A method for making low profile microswitches, particularly usef

Metal working – Method of mechanical manufacture – Electrical device making

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29450, H01H 1106

Patent

active

047682841

ABSTRACT:
A keyboard unit is shown having a substrate in which portions of the substrate are physically displaced to provide a cavity, an embossment and a plurality of protuberances for each switching station. The embossment, in registry with a button contact area, projects upwardly from the floor of the cavity a selected distance with a discontinuous annulus contact area extending around its respective cavity in generally the same plane as that in which the top surface of the substrate lies. The cavity includes a channel shaped portion extending through the discontinued portion of the discontinuous annulus. The protuberances project upwardly from the general plane of the substrate's top surface and serve to laterally locate a snap-acting disc over the contact areas. The disc may be selectively coated with highly electrically conductive material to optimize electrical switching. A piece of flexible, electrically insulative sheet may be placed over the unit to seal it from the environment.

REFERENCES:
patent: 3458930 (1969-08-01), Melkeraaen et al.
patent: 3725907 (1973-04-01), Boulanger
patent: 3967084 (1976-06-01), Pounds
patent: 4074088 (1978-02-01), Keough et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

A method for making low profile microswitches, particularly usef does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with A method for making low profile microswitches, particularly usef, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and A method for making low profile microswitches, particularly usef will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1599159

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.