Coherent light generators – Particular active media – Semiconductor
Patent
1986-07-16
1987-12-29
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
357 17, 372 46, H01S 319
Patent
active
047165715
ABSTRACT:
A semiconductor substrate having a groove with a dove-tail-shaped cross section is used as a substrate and thereon, several epitaxial layers including an active layer are formed and a current injection region is formed immediately above the groove; the semiconductor laser attains a high power lasing with the fundamental transverse mode.
REFERENCES:
Botez et al., "Channel Waveguide AlGaAs Edge Emitting LED", IBM Technical Disclosure Bulletin, vol. 21, No. 3, Aug. 1978, pp. 1260.
Y. Noda et al., "High Temperature CW Operation of 1.5 .mu.m InGaAsP/InP Buffer-Layer Loaded Planoconvex Waveguide Lasers", Electronics Letters vol. 17, No. 6, Mar. 19, 1981, pp. 226-227.
J. P. Noad et al., "Channelled Substrate Lasers . . . ", Electronics Letters, vol. 16, No. 18, Aug. 28, 1980, pp. 685-686.
Hamada Ken
Itoh Kunio
Wada Masaru
Davie James W.
Matsushita Electric - Industrial Co., Ltd.
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