Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1978-06-12
1980-02-26
Miller, Jr., Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307210, 307296A, 307315, 357 15, 357 36, 357 51, 357 58, H03K 1700
Patent
active
041907787
ABSTRACT:
An integrated semiconductor circuit arrangement includes active and passive function elements in a semiconductor body and a high frequency a.c. voltage is used as a supply voltage for the function elements. A highly doped semiconductor substrate of one conductivity type carries a weakly doped layer, for example, of the same conductivity which has zones of the opposite conductivity therein. The substrate functions as an emitter for a plurality of transistors of which the doped zones serve as bases. Spaced co-planar layer sections bridge the base zones and serve as collectors. The collectors are either metal layers or semiconductor layers and in either case are covered with an insulating layer which carries a conductive layer for connection to a high frequency supply.
REFERENCES:
patent: 2962604 (1960-11-01), Brittain
patent: 3383570 (1968-05-01), Luscher
patent: 3715613 (1973-02-01), Beneking
patent: 3911466 (1975-10-01), Lattin
patent: 3953875 (1975-04-01), Cave et al.
patent: 4004160 (1977-01-01), Streit et al.
I.B.M. Tech. Disclosure Bttn., Electronically Encodable Read-Only Store, by Abbas et al. vol. 13 No. 6, 11/70 p. 1428.
Davis B. P.
Miller, Jr. Stanley D.
Siemens Aktiengesellschaft
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