A-C Rectifier circuit for powering monolithic integrated circuit

Electric power conversion systems – Current conversion – Integrated circuit

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357 41, 363127, H02M 100

Patent

active

042765927

ABSTRACT:
A self-biased MOSFET with suitably biased substrate is used as one of the rectifiers in a rectifier circuit for converting a-c power to d-c power for application to a monolithic integrated circuit of which the rectifier circuit is a part. This avoids the parasitic transistor action which would accompany the use of an isolated pn semiconductor junction, which parasitic transistor action undesirably discharges a storage capacitor connected across the output of the rectifier circuit.

REFERENCES:
patent: 3541357 (1970-11-01), Kram
patent: 3649887 (1972-03-01), Keller et al.
patent: 3806741 (1974-04-01), Smith
patent: 4027325 (1977-05-01), Genesi
patent: 4142114 (1979-02-01), Green
IBM Technical Disclosure Bulletin, "MOSFET Substrate Bias-Voltage Generator", H. Frantz & G. Y. Sonoda, vol. 11, No. 10, Mar. 1969, p. 1219.
"Monolithic Supply Powered by 110V.", Electronics, Mar. 2, 1978, pp. 41-42.

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