A-C:H ISFET device manufacturing method, and testing methods...

Details A-C:H ISFET device manufacturing method, and testing methods... A-C:H ISFET device manufacturing method, and testing methods...

2005-03-15

2005-03-15

Kang, Donghee (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Chemically responsive

C438S048000, C438S051000, C438S054000, C257S252000, C257S253000, C324S071500, C324S438000, C324S760020

Reexamination Certificate

active

06867059

ABSTRACT:
An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.

REFERENCES:
patent: 5035791 (1991-07-01), Battilotti et al.
patent: 5777372 (1998-07-01), Kobashi
patent: 6740911 (2004-05-01), Chou et al.
patent: 20030218194 (2003-11-01), Chou et al.

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