Electricity: measuring and testing – Determining nonelectric properties by measuring electric... – Semiconductors for nonelectrical property
Reexamination Certificate
2005-11-08
2005-11-08
Kang, Donghee (Department: 2811)
Electricity: measuring and testing
Determining nonelectric properties by measuring electric...
Semiconductors for nonelectrical property
C324S750010, C324S760020, C438S014000, C438S015000, C438S048000, C257S252000, C257S253000
Reexamination Certificate
active
06963193
ABSTRACT:
An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.
REFERENCES:
patent: 6525554 (2003-02-01), Chou et al.
patent: 6531858 (2003-03-01), Chou et al.
patent: 6573741 (2003-06-01), Chou et al.
patent: 2002/0109161 (2002-08-01), Chou et al.
patent: 2003/0218194 (2003-11-01), Chou et al.
Chou Jung-Chuan
Tsai Hsuan-Ming
Birch Stewart Kolach & Birch LLP
Kang Donghee
National Yunlin University of Science and Technology
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