A-C:H ISFET device, manufacturing method, and testing...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal

Reexamination Certificate

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Details

C257S252000, C438S048000, C438S051000, C438S054000, C324S071500, C324S438000, C324S760020

Reexamination Certificate

active

06847067

ABSTRACT:
An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.

REFERENCES:
patent: 6525554 (2003-02-01), Chou et al.
patent: 6531858 (2003-03-01), Chou et al.
patent: 6573741 (2003-06-01), Chou et al.
patent: 20020109161 (2002-08-01), Chou et al.
patent: 20030218194 (2003-11-01), Chou et al.

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