Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Reexamination Certificate
2005-01-25
2005-01-25
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
C257S252000, C438S048000, C438S051000, C438S054000, C324S071500, C324S438000, C324S760020
Reexamination Certificate
active
06847067
ABSTRACT:
An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.
REFERENCES:
patent: 6525554 (2003-02-01), Chou et al.
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patent: 6573741 (2003-06-01), Chou et al.
patent: 20020109161 (2002-08-01), Chou et al.
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Chou Jung-Chuan
Tsai Hsuan-Ming
Birch & Stewart Kolasch & Birch, LLP
Kang Donghee
National Yunlin University of Science and Technology
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