700-850 nanometer semiconductor diode laser

Details 700-850 nanometer semiconductor diode laser 700-850 nanometer semiconductor diode laser

1992-03-05

1993-06-22

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 44, H01S 319

Patent

active

052220907

ABSTRACT:
Disclosed herein is a semiconductor laser device comprised of a semiconductor substrate having deposited thereon at least one quantum well active region comprised of an alloy of the group consisting of GaInAsP and AlGaInAs sandwiched between upper and lower confinement layers of AlGaInAsP alloy. The laser device is further comprised of AlGaInP cladding layers.

REFERENCES:
patent: 4841531 (1989-06-01), Kondow et al.
patent: 4860297 (1989-08-01), Hayakawa et al.
patent: 5016252 (1991-05-01), Hamada et al.
patent: 5153889 (1992-10-01), Sugawara et al.

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