3D photonic bandgap device in SOI method

Optical waveguides – Planar optical waveguide – Thin film optical waveguide

Reexamination Certificate

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Details

C385S129000, C385S130000, C385S141000, C438S029000, C438S031000

Reexamination Certificate

active

11416507

ABSTRACT:
A 3D Photonic Bandgap Device in SOI Method (NC#97881). The method includes providing a substrate comprising a semiconductor layer over an insulator layer and fabricating a 3D photonic bandgap structure having at least one period over the substrate.

REFERENCES:
patent: 6366392 (2002-04-01), Tokushima
patent: 6466360 (2002-10-01), Tokushima
patent: 6936854 (2005-08-01), Iwasaki et al.

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