3D interconnect with protruding contacts

Details 3D interconnect with protruding contacts 3D interconnect with protruding contacts

2007-07-16

2010-11-16

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C257S178000, C257S276000, C257S778000

Reexamination Certificate

active

07833830

ABSTRACT:
This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate having at least one interconnect located substantially within the first substrate, and a second semiconductor substrate having at least one protruding contact point that substantially contacts at least one interconnect.

REFERENCES:
patent: 5055426 (1991-10-01), Manning
patent: 5117276 (1992-05-01), Thomas et al.
patent: 5229647 (1993-07-01), Gnadinger
patent: 5275330 (1994-01-01), Isaacs et al.
patent: 5424245 (1995-06-01), Gurther et al.
patent: 5627106 (1997-05-01), Hsu et al.
patent: 5870289 (1999-02-01), Tokuda et al.
patent: 5943574 (1999-08-01), Tehrani et al.
patent: 5998292 (1999-12-01), Black et al.
patent: 6025730 (2000-02-01), Akram et al.
patent: 6239025 (2001-05-01), Bease et al.
patent: 6291331 (2001-09-01), Wang et al.
patent: 6479376 (2002-11-01), Huang et al.
patent: 6534374 (2003-03-01), Johnson et al.
patent: 6593224 (2003-07-01), Lin
patent: 6649441 (2003-11-01), Ruf
patent: 6703286 (2004-03-01), Yu et al.
patent: 6710446 (2004-03-01), Nagai et al.
patent: 6809021 (2004-10-01), Ohtani et al.
patent: 6809421 (2004-10-01), Hayasaka et al.
patent: 6903443 (2005-06-01), Farnworth et al.
patent: 6962835 (2005-11-01), Tong et al.
patent: 7086147 (2006-08-01), Caletka et al.
patent: 7157787 (2007-01-01), Kim et al.
patent: 7294568 (2007-11-01), Goodner et al.
patent: 7312487 (2007-12-01), Alam et al.
patent: 7358602 (2008-04-01), Hara
patent: 7557452 (2009-07-01), Williams et al.
patent: 2001/0008777 (2001-07-01), Seyyedy
patent: 2002/0022335 (2002-02-01), Chen
patent: 2002/0074637 (2002-06-01), McFarland
patent: 2002/0197844 (2002-12-01), Johnson et al.
patent: 2003/0019836 (2003-01-01), Bradley et al.
patent: 2003/0071330 (2003-04-01), Romano et al.
patent: 2006/0043535 (2006-03-01), Hiatt
patent: 0651449 (1995-05-01), None
patent: 1329489 (2003-07-01), None
patent: WO 0161743 (2001-08-01), None
G.L.Sun, “Cool Plasma Activated Surface i Wafer Direct Bonding Technology”, Journal de Physique.

Affiliated with

Also associated with

Rating

3D interconnect with protruding contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with 3D interconnect with protruding contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and 3D interconnect with protruding contacts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4243745