3-stage method for forming deep trench structure and deep...

Semiconductor device manufacturing: process – Making passive device – Trench capacitor

Reexamination Certificate

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C438S387000, C438S389000, C438S390000, C438S392000

Reexamination Certificate

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07094658

ABSTRACT:
A method for forming a deep trench structure comprises the steps of providing a silicon substrate; forming a mask layer of a predetermined pattern on the silicon substrate to expose a portion of the silicon substrate; forming a first trench in the exposed portion of the silicon substrate, the first trench having a first depth; forming a nitride layer on the surfaces of the whole structure; forming a second trench in the first trench downward, the second trench having a second depth greater than the first depth; forming another nitride layer on the surfaces of the whole structure; and forming a third trench in the second trench downward, the third trench having a third depth greater than the second depth. The method of the present invention can make the whole trench have better etch uniformity, thereby obtaining good electrical performance.

REFERENCES:
patent: 6071823 (2000-06-01), Hung et al.
patent: 6387773 (2002-05-01), Engelhardt
patent: 2002/0132422 (2002-09-01), Ranade et al.
patent: 2003/0211686 (2003-11-01), Panda et al.

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