Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2006-08-22
2006-08-22
Deo, Duy-Vu N (Department: 1765)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S387000, C438S389000, C438S390000, C438S392000
Reexamination Certificate
active
07094658
ABSTRACT:
A method for forming a deep trench structure comprises the steps of providing a silicon substrate; forming a mask layer of a predetermined pattern on the silicon substrate to expose a portion of the silicon substrate; forming a first trench in the exposed portion of the silicon substrate, the first trench having a first depth; forming a nitride layer on the surfaces of the whole structure; forming a second trench in the first trench downward, the second trench having a second depth greater than the first depth; forming another nitride layer on the surfaces of the whole structure; and forming a third trench in the second trench downward, the third trench having a third depth greater than the second depth. The method of the present invention can make the whole trench have better etch uniformity, thereby obtaining good electrical performance.
REFERENCES:
patent: 6071823 (2000-06-01), Hung et al.
patent: 6387773 (2002-05-01), Engelhardt
patent: 2002/0132422 (2002-09-01), Ranade et al.
patent: 2003/0211686 (2003-11-01), Panda et al.
Chen Meng-Hung
Lin Shian-Jyh
Bacon & Thomas PLLC
Deo Duy-Vu N
NANYA Technology Corporation
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