3-D spiral stacked inductor on semiconductor material

Details 3-D spiral stacked inductor on semiconductor material 3-D spiral stacked inductor on semiconductor material

2005-01-11

2005-01-11

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S277000, C257S508000, C257S774000, C257S758000, C257S778000, C257S528000, C257S776000, C438S706000, C438S720000, C438S723000, C336S012000

Reexamination Certificate

active

06841847

ABSTRACT:
A 3-D spiral stacked inductor is provided having a substrate with a plurality of turns in a plurality of levels wherein the number of levels increases from an inner turn to the outer turn of the inductor. First and second connecting portions are respectively connected to an inner turn and an outermost turn, and dielectric material contains the first and second connecting portions and the plurality of turns over the substrate.

REFERENCES:
patent: 5414402 (1995-05-01), Mandai et al.
patent: 6355535 (2002-03-01), Liou
patent: 6395637 (2002-05-01), Park et al.
patent: 6472285 (2002-10-01), Liou
patent: 20020157849 (2002-10-01), Sakata
patent: 20020157849 (2002-10-01), None

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