Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-12-18
2007-12-18
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S083000, C257S258000, C257S292000
Reexamination Certificate
active
10901309
ABSTRACT:
Dense, massively parallel signal processing electronics are co-packaged behind associated sensor pixels. Microchips containing a linear or bilinear arrangement of photo-sensors, together with associated complex electronics, are integrated into a simple 3-D structure (a “mirror cube”). An array of photo-sensitive cells are disposed on a stacked CMOS chip's surface at a 45° angle from light reflecting mirror surfaces formed on a neighboring CMOS chip surface. Image processing electronics are held within the stacked CMOS chip layers. Electrical connections couple each of said stacked CMOS chip layers and a distribution grid, the connections for distributing power and signals to components associated with each stacked CSMO chip layer.
REFERENCES:
patent: 6355976 (2002-03-01), Faris
patent: 6821808 (2004-11-01), Nakamura et al.
patent: 2003/0123792 (2003-07-01), Matsumoto et al.
Kwiatkowski Kris
Lyke James
Durkis James C.
Gottlieb Paul A.
O'Dwyer Thomas S.
U.S. Department of Energy
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