3-D inductor and transformer devices in MRAM embedded...

Details 3-D inductor and transformer devices in MRAM embedded... 3-D inductor and transformer devices in MRAM embedded...

2007-08-28

2007-08-28

Doan, Theresa (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C257S421000, C257S295000, C438S003000, C438S239000

Reexamination Certificate

active

11147599

ABSTRACT:
An integrated circuit device includes a magnetic random access memory (“MRAM”) architecture and at least one inductance element formed on the same substrate using the same fabrication process technology. The inductance element, which may be an inductor or a transformer, is formed at the same metal layer (or layers) as the program lines of the MRAM architecture. Any available metal layer in addition to the program line layers can be added to the inductance element to enhance its efficiency. The concurrent fabrication of the MRAM architecture and the inductance element facilitates an efficient and cost effective use of the physical space available over active circuit blocks of the substrate, resulting in three-dimensional integration.

REFERENCES:
patent: 5446311 (1995-08-01), Ewen et al.
patent: 5884990 (1999-03-01), Burghartz et al.
patent: 2003/0156449 (2003-08-01), Ooishi
patent: 2004/0164839 (2004-08-01), Park et al.
patent: 2004/0222487 (2004-11-01), Tanabe

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