Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...
Reexamination Certificate
2007-06-12
2007-06-12
Gupta, Yogendra N. (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step of heat treating...
C117S002000, C117S084000, C117S088000, C117S906000, C117S952000
Reexamination Certificate
active
10352934
ABSTRACT:
Provided is an excellent p-type nitride type 3-5 group compound semiconductor having escellent electrical properties such as a low contact resistance to an electrode metal, a low ohmic property, etc., by heat-treating a nitride type 3-5 group compound semiconductor doped with p-type dopant in an hydrogen-containing gas atmosphere of a specific concentration.
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Ono Yoshinobu
Tsuchida Yoshihiko
Gupta Yogendra N.
Song Matthew J.
Sumitomo Chemical Company Limited
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