3-5 group compound semiconductor, process for producing the...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...

Reexamination Certificate

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Details

C117S002000, C117S084000, C117S088000, C117S906000, C117S952000

Reexamination Certificate

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10352934

ABSTRACT:
Provided is an excellent p-type nitride type 3-5 group compound semiconductor having escellent electrical properties such as a low contact resistance to an electrode metal, a low ohmic property, etc., by heat-treating a nitride type 3-5 group compound semiconductor doped with p-type dopant in an hydrogen-containing gas atmosphere of a specific concentration.

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