Telecommunications – Transmitter and receiver at same station – With transmitter-receiver switching or interaction prevention
Reexamination Certificate
2006-08-15
2006-08-15
Le, Lana (Department: 2685)
Telecommunications
Transmitter and receiver at same station
With transmitter-receiver switching or interaction prevention
C455S080000, C455S082000, C455S083000
Reexamination Certificate
active
07092677
ABSTRACT:
A SPDT switch includes an antenna port. A transmitter section is coupled to a transmitter port. The transmitter section includes a plurality of transistors that are coupled in series relative to each other. A receiver section is coupled to a receiver port. The receiver section includes a plurality of transistors that are coupled in series relative to each other, so that when the transmitter section transmits high power to the antenna port, the receive section is effectively off to provide isolation to the receive port. The receiver port is coupled to the receiver section using at least one external capacitor. The at least one external capacitor is used to improve the power handling capability and harmonic performance of the switch.
REFERENCES:
patent: 4803447 (1989-02-01), Schultz et al.
patent: 4890077 (1989-12-01), Sun
patent: 4979232 (1990-12-01), Martz et al.
patent: 5475875 (1995-12-01), Katsuyama et al.
patent: 5514992 (1996-05-01), Tanaka et al.
patent: 5594394 (1997-01-01), Sasaki et al.
patent: 5748053 (1998-05-01), Kameyama et al.
patent: 6373291 (2002-04-01), Hamada et al.
patent: 6721544 (2004-04-01), Franca-Neto
patent: 2001/0040479 (2001-11-01), Zhang
patent: 2002/0177417 (2002-11-01), Visser
patent: 2003/0171098 (2003-09-01), Tai et al.
patent: 0766396 (1997-04-01), None
patent: 0 700 161 (1999-03-01), None
patent: 09238059 (1997-09-01), None
patent: WO 01/67602 (2001-09-01), None
patent: WO 02/067451 (2002-08-01), None
“High-Performance GaAs Switch IC's Fabricated Using MESFET's with Two Kinds of Pinch-Off Voltages and a Symmetrical Pattern Configuration,” Uda et al.IEEE Journal of Solid-State Circuits. Oct. 1994. vol. 29, No. 10.
“A Low-Voltage, High-Power T/R-Switch MMIC Using LC Resonators,” Tokumitsu et al.IEEE Transactions on Microwave Theory and Techniques, May 1995. vol. 43, No. 5.
“GaAs High-Power RF Single-Pole Double-Throw Switch IC for Digital Mobile Communication System,” Miyatsuji et al.IEEE International Solid-State Circuit Conference. 1994.
“Novel High Performance SPDT Power Switches Using Multi-Gate FET's,” McGrath et al.IEEE MTT-S Digest. 1991.
“A 3V MMIC hip Set for 1.9GHz Mobile Communication Systems,” Tanaka et al.IEEE International Solid-State Circuits Conference. 1995.
“A High Power 2-18 GHz T/R Switch,” Schindler et al.IEEE MTT-S Digest. 1990.
“Voltage-Tolerant Monolithic L-Band GaAs SPDT Switch,” Cooper et al.,IEEE MTT-S Digest(1989).
“A Dual-Gate Shorted-Anode Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with Floating Ohmic Contact for Suppressing Snapback and Fast Switching Characteristics,” Oh et al.,Microelectronics Journal 30pp. 577-581 (1999).
McMorrow Robert J.
Zhang Shuyun
Analog Devices Inc.
Gauthier & Connors LLP
Le Lana
LandOfFree
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