2N mask design for sequential lateral solidification

Details 2N mask design for sequential lateral solidification 2N mask design for sequential lateral solidification

2006-06-06

2006-06-06

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07056629

ABSTRACT:
A mask design for use in sequential lateral solidification processing is provided comprising a first array of beamlet and a second array of beamlets, which is parallel to the first, for accomplishing a first 2-shot process, and a third array of beamlets and forth array of beamlets, both at at an angle, for example 90 degrees, relative to the first and second array of beamlets for accomplishing a second 2-shot process without the need to rotate the mask. A method of using the mask to accomplish a 2N crystallization process.

REFERENCES:
patent: 6326286 (2001-12-01), Park et al.
patent: 6555449 (2003-04-01), Im et al.

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