2D/1D junction device as a Coulomb blockade gate

Details 2D/1D junction device as a Coulomb blockade gate 2D/1D junction device as a Coulomb blockade gate

1993-09-16

1995-03-28

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

257 9, 257 37, 257288, H01L 2712

Patent

active

054019800

ABSTRACT:
A junction is formed by the establishment of first and second adjacent conductivity regions having a transition therebetween from wide (2D) to narrow (1D) with respect to the electron wavelength at the Fermi level. The electrons in the wide region can be propagated at any of a continuum of energies in two dimensions while, in the narrow region, allowable energies become quantized, forming a potential barrier similar to a junction in a tunnel diode. The junction formed in this manner exhibits a Coulomb blockade effect and can be made to operate alternatively as an extremely small capacitance and a conductance to sequentially transfer single electrons, thus forming a Coulomb blockade gate. The Coulomb blockade gate can be used in an oscillator or in digital counting and memory applications.

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