2-terminal semiconductor device using abrupt metal-insulator...

Details 2-terminal semiconductor device using abrupt metal-insulator... 2-terminal semiconductor device using abrupt metal-insulator...

2004-12-13

2010-06-01

Andújar, Leonardo (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

C257SE49001, C257SE49002, C438S095000

Reexamination Certificate

active

07728327

ABSTRACT:
Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.

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