Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – With current flow along specified crystal axis
Reexamination Certificate
2008-09-09
2011-10-18
Mandala, Victor (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
With current flow along specified crystal axis
C257S330000, C257SE29004, C257SE29255
Reexamination Certificate
active
08039877
ABSTRACT:
A method of forming a field effect transistor having a heavily doped p-type (110) semiconductor layer over a metal substrate starts with providing a heavily doped p-type (110) silicon layer, and forming a lightly doped p-type (110) silicon layer on the P heavily doped-type (110) silicon layer. The method also includes forming a p-channel MOSFET which has a channel region along a (110) crystalline plane in the lightly doped p-type (110) silicon layer to allow a current conduction in a <110> direction. The p-channel MOSFET also includes a gate dielectric layer having a high dielectric constant material lining the (110) crystalline plane. The method further includes forming a top conductor layer overlying the lightly doped p-type (110) silicon layer and a bottom conductor layer underlying the heavily doped p-type (110) silicon layer. A current conduction from the top conductor layer to the bottom conductor layer is characterized by a hole mobility along a <110> crystalline orientation and on a (110) crystalline plane.
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Ngai Tat
Wang Qi
Fairchild Semiconductor Corporation
Kilpatrick Townsend & Stockton LLP
Mandala Victor
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