1989-02-15
1990-07-03
Wojciechowicz, Edward J.
357 15, 357 16, 357 55, 357 60, H01L 2980
Patent
active
049395572
ABSTRACT:
A field effect transistor (FET) structure suitable for use at microwave frequencies is fabricated on a planar surface of a semi-insulating single crystal GaAs substrate which has been cut and polished to present the (110) surface. This orientation is selected because of its non-polar and other unique surface and interface properties. The (110) crystal axis is tilted from the normal of the planar surface in the direction to expose more of the (111) Ga face about 5.degree. to facilitate molecular beam epitaxial (MBE) growth of smooth, defect-free thin films. An elongate gate electrode is formed along the bottom of an anisotropically etched trench having a pair of longitudinal sidewalls, one vertical and the other tilted outwardly. The trench is selectively oriented on the substrate to facilitate such anisotropic etching. Source and drain electrodes are respectively formed proximate the outwardly tilted and vertical trench sidewalls thereby forming a FET with a higher drain-to-gate breakdown voltage combined with lower parasitic resistance between the source and gate electrode. The invention has demonstrated potential for high speed digital circuits as well a microwave power FET applications.
REFERENCES:
Allen et al.-Applied Physics Letters 51(9), p. 670, 31 Aug. 1987, "Device Quality Growth and Characterization of (110) GaAs Grown by MBE."
(1) L. Parechanian-Allen, E. R. Weber, J. Washburn and Y. C. Pao, "Surface Faceting of (110) GaAs: Analysis and Elimination", Material Research Society Symposium Proceedings, vol. 82, p. 487 (1987).
(2) L. T. P. Allen, E. R. Weber, J. Washburn, and Y. C. Pao, "Device Quality Growth and Characterization of (110) GaAs Grown by Molecular Beam Epitaxy", Applied Physics Letters 51 (9), p. 670, 31 Aug. 1987.
Y. C. Pao, Weiming Ou, and J. S. Harris, Jr., "(110)-Oriented GaAs MESFET's", IEEE Electron Device Letters, vol. 9, No, 3, p. 119, Mar. 1988.
Harris James S.
Pao Yi-Ching
Cole Stanley Z.
Varian Associates Inc.
Wojciechowicz Edward J.
Yakes John C.
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