(1-x)BaO.xTiO.sub.2 System dielectric material for use in a micr

Wave transmission lines and networks – Long line elements and components – Strip type

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330307, 333 35, 361321, 501137, 501138, H01P 100, C04B 3549

Patent

active

043530478

ABSTRACT:
The present invention provides a dielectric material adapted for microwave integrated circuits (MIC) and an electric circuit making use of said dielectric material. More particularly, an oxide dielectric material principally consisting of (1-x)BaO.xTiO.sub.2 (0.7.ltoreq.x.ltoreq.0.95) and containing both 0.007 to 0.7 weight % of manganese and 0.037 to 3.7 weight % of zirconium, has a large dielectric constant, a small dielectric loss and a small temperature coefficient of dielectric constant and is uniform over a broad range, and especially it is possible to easily manufacture a substrate having a uniform dielectric constant and a uniform dielectric loss. Transistors and MIC's employing such substrates can attain uniform and excellent high-frequency characteristics.

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patent: 3775142 (1973-11-01), Roup
patent: 3938064 (1976-02-01), O'Bryan et al.
patent: 4004256 (1977-01-01), Duncan
patent: 4026811 (1977-05-01), Readey et al.
patent: 4037168 (1977-07-01), Katoh et al.

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