High speed and current gain insulated gate field effect transist

Details High speed and current gain insulated gate field effect transist High speed and current gain insulated gate field effect transist

1981-03-20

1984-07-24

Davie, James W.

357 41, 357 46, H01L 2978

Patent

active

044620411

ABSTRACT:
An improved insulated gate field effect transistor having a plurality of alternately positioned source and drain regions interconnected by interdigitized drain and source finger conductors making contact at a plurality of positions to a respective source or drain region. A serpentine gate conductor makes contacts to both areas of the plurality of polycrystalline gates between the plurality of source and drain regions.

REFERENCES:
patent: 3390025 (1968-06-01), Strieter
patent: 3398335 (1968-08-01), Dill
patent: 3484865 (1969-12-01), Nienhuis
patent: 3586930 (1971-06-01), Das et al.
patent: 3652906 (1972-03-01), Christensen
patent: 3667115 (1972-06-01), Barson et al.
patent: 3694673 (1972-09-01), Au
patent: 3813586 (1974-05-01), Conner
patent: 4015278 (1977-03-01), Fukuta
patent: 4084173 (1978-04-01), Fantechi
patent: 4219828 (1980-08-01), Lardy et al.

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