Insulated gate thyristor

Details Insulated gate thyristor Insulated gate thyristor

1998-04-03

2000-04-25

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257137, 257152, 257168, H01L 2974, H01L 31111

Patent

active

060547286

ABSTRACT:
An insulated gate thyristor is provided which includes: a first-conductivity-type base layer, first and second second-conductivity-type base regions formed in the base layer, a first-conductivity-type source region formed in the first base region, a first-conductivity-type emitter region formed in the second base region, and a gate electrode layer formed on a gate insulating film over the first base region, first-conductivity-type base layer, and second base region, which are interposed between the first-conductivity-type source region and the first-conductivity-type emitter region. The thyristor further includes a first main electrode that contacts with both the first base region and the first-conductivity-type source region, a second-conductivity-type emitter layer formed on the other surface of the first-conductivity-type base layer, a second main electrode that contacts with the second-conductivity-type emitter layer, a gate electrode connected to the gate electrode layer; and an insulating film covering entire surface areas of the second second-conductivity-type base region and the first-conductivity-type emitter region. In this insulated gate thyristor, an exposed surface portion of the first second-conductivity-type base region that is interposed between the first-conductivity-type base layer and the first-conductivity-type source region has a smaller width than an exposed surface portion of the second second-conductivity-type base region interposed between the first-conductivity-type base layer and the first-conductivity-type emitter region.

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MOS Controlled Thyristors (MCT's), V.A.K. Temple,General Electric, Co., pp. 282-285 with abstract.
Comparison of RBSOA of ESTs WIYH IGBTs and MCTs,N.Iwamura, B.J. Baliga,R. Kurlangunda,G. Mann and A W.Kelly, Power Semiconductor Research Center,North Carolina State University pp. 195-199 with abstract.
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High-Voltage Current saturation in Emitter Swithced Thyristors, M.S. Shekar, B.J.Baliga,Fellow IEEE,M. Nandakumar,S.Tandon, and A.Reisman, IEEE Electron Device Letters,vol. 12,No. 7,Jul. 1991, pp. 387-389 with abstract .

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