Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Patent
1999-06-17
2000-04-25
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
257 88, 257102, 372 45, 372 46, 372 96, H01L 3300, H01S 319
Patent
active
06054726&
ABSTRACT:
A light-emitting semiconductor device has a planar structure including two multilayer reflecting layers, two cladding layers, and an active layer of a first conductive type. The cladding layers have bandgap energies exceeding the bandgap energy of the active layer. The multilayer reflecting layers each include at least one constituent layer with a bandgap energy exceeding the bandgap energy of the active layer. An area of a second conductive type extends from the upper surface of the device through the upper multilayer reflecting layer and upper cladding layer into the active layer, forming a pn junction in the active layer. This planar structure is suitable for high-yield manufacturing.
REFERENCES:
patent: 5903590 (1999-05-01), Hadley et al.
patent: 5963576 (1999-10-01), Claisse et al.
Floyd et al. "Reduced Threshold Bottom Emitting Vertical Cavity Lasers by A1As Oxidation," SCL 14.2, 1996.
Hamano Hiroshi
Nakamura Yukio
Ogihara Mitsuhiko
Taninaka Masumi
Frank Robert J.
Oki Data Corporation
Tran Minh Loan
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