Long wavelength infrared photodetectors

Details Long wavelength infrared photodetectors Long wavelength infrared photodetectors

1998-06-15

2000-04-25

Le, Que T.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

257 22, H01L 3100

Patent

active

060547065

ABSTRACT:
The subject invention includes a far-infrared detector based on InSbBix1-x which operates 12 .mu.m at room temperature with an energy band gap as low as 0.13 eV (9.3 .mu.m) at 77K and 12 .mu.m at 300K. The subject invention may be prepared by growing epitaxial layers of InSbBi on InSb which is grown on a suitable substrate. The wavelength of absorption may be controlled through the variation of the Bi concentration in the InSbBi active layer.

REFERENCES:
patent: 6005127 (1999-12-01), Todd et al.

Affiliated with

Also associated with

Rating

Long wavelength infrared photodetectors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Long wavelength infrared photodetectors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Long wavelength infrared photodetectors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-995110