Planar heterojunction avalanche photodiode

Details Planar heterojunction avalanche photodiode Planar heterojunction avalanche photodiode

1991-02-12

1991-10-15

Wojciechowicz, Edward J.

357 13, 357 20, 357 52, H01L 2714, H01L 3100

Patent

active

050578910

ABSTRACT:
A planar heterojunction avalanche photodiode (APD) having a first semiconductor layer of a first conductivity type for generating carriers by absorbing light, a second semiconductor layer of the same first conductivity type having an impurity concentration which decreases with the distance from the first semiconductor layer and a bandgap greater than that of the first semiconductor layer for avalanche-multiplying the carriers injected from the first semiconductor layer. A first semiconductor region of a second conductivity type is diffused in the second semiconductor layer at a prescribed depth from the upper surface of the second semiconductor layer thus forming a stepwise p-n junction. A guard-ring of the second conductivity type is formed in the second semiconductor layer to overlap the circumferential part of the first semiconductor region and forming a linearly graded p-n junction with the second semiconductor layer in a position closer to the first semiconductor layer than the stepwise p-n junction.

REFERENCES:
patent: 4383266 (1983-05-01), Sakai et al.
patent: 4651187 (1987-03-01), Sugimoto et al.
patent: 4684969 (1987-08-01), Taguchi
T. Torikai et al, "Low Noise . . . Epitaxy", 10th European Conference on Optical Communication, Sep. 3-6, 1984.
Matsushima et al., "High . . . Structure", Electronics Letters, vol. 20, No. 6, Mar. 15, 1984, pp. 235-236.
Surai et al., "In GaAs APD . . . Region", Electronics Letters, vol. 19, No. 14, Jul. 7, 1983, pp. 534-536.

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