Permeable base transistor with gate fingers

Details Permeable base transistor with gate fingers Permeable base transistor with gate fingers

1990-01-11

1991-10-15

Mintel, William

357 55, H01L 2980, H01L 2906

Patent

active

050578839

ABSTRACT:
A permeable base transistor includes a source region and a drain region confronting each other in a semi-insulating semiconductor layer, a gate electrode having a current penetrating aperture through which a channel current flows disposed between the source region and the drain region and the source and drain regions, and the gate electrode are disposed so that the channel current flows transverse to the thickness of the semi-insulating semiconductor layer.

REFERENCES:
patent: 4463366 (1984-07-01), Ishii et al.
patent: 4583107 (1986-04-01), Clarke
patent: 4724223 (1988-02-01), Ditchek
Howes et al, "Gallium Arsenide", John Wiley & Sons, 1986, pp. 420-421.
Rathman et al, "The Effect of Base-Schottky . . . Performance", IEEE Electron Device Letters, vol. EDL-5, No. 6, Jun. 1984, pp. 191-193.
Mishra et al, "Short-Channel Effects . . . Investigation", IEEE Electron Device Letters, vol. EDL-4, No. 4, Apr. 1983, pp. 125-127.
Adachi et al, "A New Gate . . . FET", IEEE Electron Device Letters, vol. EDL-6, No. 6, Jun. 1985, pp. 264-266.

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