Attenuated phase-shifting mask with opaque reticle alignment mar

Details Attenuated phase-shifting mask with opaque reticle alignment mar Attenuated phase-shifting mask with opaque reticle alignment mar

1994-11-09

1995-12-19

Westin, Edward P.

Radiant energy

Photocells; circuits and apparatus

Photocell controls its own optical systems

356401, 430 5, G01N 2186

Patent

active

054770580

ABSTRACT:
An attenuated phase-shifting mask has a circuit pattern formed of a layer of halftone phase-shifting material, e.g., SiNx, which inherently appears substantially transparent to the visible light utilized to align the mask with a wafer. The reticle alignment marks of the mask are made of a separate substantially opaque layer in order to ensure that the reticle alignment marks will be visible to the mask/wafer alignment equipment.

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A. P. Ghosh and D. B. Dove, Direct Phase Measurements In Phase Shifting Masks, SPIE vol. 1673 Integrated Circuit Metrology, Inspection and Process Control VI, pp. 242-254, Jan. 1992.
A. Callegari et al., Optical properties of hydrogenated amorphous-carbon film for attenuated phase-shift mask applications, J. Vac. Sci. Technol B 11(6), pp. 2697-2699 (Nov./Dec. 1993).
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Wen-an Loong et al., Simulation and fabrication of a new phase shifting mask for 0.35 .mu.m contact hole pattern transfer: Halftone-rim, SPIE vol. 2087 Photomask Technology and Management, pp. 380-389, Jan. 1993.
Burn J. Lin. The Attenuated Phase-Shifting Mask. Solid State Technology, pp. 43-47 (Jan/1992).
M. A. McCord et al., Effect of mask absorber thickness on x-ray exposure latitude and resolution, J. Vac. Sci. Technol. B 11(6), pp. 2881-2887 (Nov./Dec. 1993).
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