Method of delaminating a pre-fabricated transistor layer from a

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Having enclosed cavity

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438457, 438458, 438459, 438915, H01L 2130, A01L 2146

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active

060543701

ABSTRACT:
A method of fabricating a film of active devices is provided. First damaged regions are formed, in a substrate, underneath first areas of the substrate where active devices are to be formed. Active devices are formed onto the first areas. Second damaged regions are formed, in the substrate, between the first damaged regions. The film is caused to detach from a rest of the substrate at a location where the first and second damaged regions are formed.

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