Method for fabricating capacitor of semiconductor memory device

Details Method for fabricating capacitor of semiconductor memory device Method for fabricating capacitor of semiconductor memory device

1999-10-07

2000-04-25

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438240, 438681, H01L 2100

Patent

active

060543329

ABSTRACT:
The present invention provides a method for fabricating a capacitor of a semiconductor memory device to improve the characteristic of step coverage during depositing upper electrode, and simultaneously to prevent impurities remained between upper electrode and high dielectric layer.
The method for fabricating capacitor of a semiconductor memory device comprises the steps of: forming an intermetal insulating layer having a contact hole for exposing a junction region on a semiconductor substrate provided with the junction region; forming a contact plug within the contact hole; forming a barrier layer on the contact plug and on the adjoining intermetal insulating layer; forming a lower electrode so as to surround the barrier layer; forming a high dielectric layer on the intermetal insulating layer formed on the lower electrode; forming an upper electrode on the high dielectric layer according to the MOCVD method; and crystallizing the lower electrode, the high dielectric layer and the upper electrode, wherein in the step of forming the upper electrode, a step of supplying precursors used for forming the upper electrode for a selected time, and a step of interrupting the supply of precursors for a selected time are repeated at least one time.

REFERENCES:
patent: 5629229 (1997-05-01), Si et al.
patent: 5877062 (1999-03-01), Horii
patent: 5962069 (1999-10-01), Schlinder et al.
patent: 5994153 (1999-11-01), Nagel et al.

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